Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/171392
Kind Code:
A1
Abstract:
A sputtering target according to the present invention is a sintered body having a chemical composition containing 10 to 40 at.% of Ga and 0.1 to 15 at.% of Na as metal elements, with the remainder made up by Cu and unavoidable impurities. In the sintered body, Na is contained in the form of at least one Na compound selected from sodium sulfate, sodium sulfite, sodium selenate and sodium selenite. The sintered body has such a structure that a Na compound phase is dispersed therein, and the Na compound phase has an average particle diameter of 10 μm or less.
Inventors:
ZHANG SHOUBIN (JP)
UMEMOTO KEITA (JP)
SHOJI MASAHIRO (JP)
UMEMOTO KEITA (JP)
SHOJI MASAHIRO (JP)
Application Number:
PCT/JP2014/060405
Publication Date:
October 23, 2014
Filing Date:
April 10, 2014
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C9/00
Foreign References:
| JP2012082498A | 2012-04-26 | |||
| JP2007302909A | 2007-11-22 | |||
| JP2011214140A | 2011-10-27 | |||
| JP2014034703A | 2014-02-24 | |||
| JP2013199704A | 2013-10-03 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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