Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2015/052927
Kind Code:
A1
Abstract:
A sputtering target which contains a hexagonal layered compound that is mainly composed of indium oxide and zinc oxide and is represented by formula In2O3(ZnO)m (wherein m is an integer of 2-7), and which also contains elemental Sn and elemental Zr. The ratio of elemental Sn relative to all metal elements in this sputtering target is more than 2,000 ppm but 20,000 ppm or less.
Inventors:
NISHIMURA MAMI (JP)
OHYAMA MASASHI (JP)
OHYAMA MASASHI (JP)
Application Number:
PCT/JP2014/005120
Publication Date:
April 16, 2015
Filing Date:
October 08, 2014
Export Citation:
Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C23C14/34; C04B35/00; C23C14/08; H01B5/14
Domestic Patent References:
| WO2004105054A1 | 2004-12-02 | |||
| WO2003008661A1 | 2003-01-30 |
Foreign References:
| JP2013030784A | 2013-02-07 |
Attorney, Agent or Firm:
WATANABE, Kihei et al. (JP)
Kihei Watanabe (JP)
Kihei Watanabe (JP)
Download PDF: