Title:
SPUTTERING TARGET, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SPUTTERING FILM USING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2023/058698
Kind Code:
A1
Abstract:
This sputtering target contains crystal grains, contains 3 vol% or less of an amorphous phase, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.
Inventors:
SHONO DAIKI (JP)
KONDO TAIGA (JP)
MESUDA MASAMI (JP)
ITOH KENICHI (JP)
HANAWA KOICHI (JP)
KONDO TAIGA (JP)
MESUDA MASAMI (JP)
ITOH KENICHI (JP)
HANAWA KOICHI (JP)
Application Number:
PCT/JP2022/037346
Publication Date:
April 13, 2023
Filing Date:
October 05, 2022
Export Citation:
Assignee:
TOSOH CORP (JP)
TOSOH SPECIALITY MAT CORPORATION (JP)
TOSOH SPECIALITY MAT CORPORATION (JP)
International Classes:
C23C14/34; B21B1/00; B21B3/00
Domestic Patent References:
| WO2009107763A1 | 2009-09-03 |
Foreign References:
| JP2011132563A | 2011-07-07 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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