Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2017/073487
Kind Code:
A1
Abstract:
This sputtering target comprises a substrate and a target material formed on the surface of the substrate. The target material has a composition comprising a metal element M within a range of 8-66 at.% and a remainder of Si and unavoidable impurities. The target material has a metal M phase and a metal Si phase. In X-ray diffraction, the ratio Isum/ISi×100 of the integrated intensity ISi of the peak of the (111) plane of the metal Si and the total Isum of the integrated intensities of the peaks of individual silicide compounds represented by MxSiy is 10% or less.
Inventors:
KATO SHINJI (JP)
ZHANG SHOUBIN (JP)
ZHANG SHOUBIN (JP)
Application Number:
PCT/JP2016/081322
Publication Date:
May 04, 2017
Filing Date:
October 21, 2016
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; B22F3/14; B22F7/04; C22C14/00; C22C16/00; C22C19/03; C22C19/07; C22C27/02; C22C27/04; C22C27/06; C23C4/06
Foreign References:
| JPH06346232A | 1994-12-20 | |||
| JPH05222528A | 1993-08-31 | |||
| JPH07228967A | 1995-08-29 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
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