SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF

Title:

SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF

Document Type and Number:

WIPO Patent Application WO/2005/012591

Kind Code:

A1

Abstract:

A sintered sputtering target which has a structure having an average crystallite size of 1 nm to 50 nm and preferably comprises an alloy having three or more elements and containing, as a main component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal; and a method for producing said target, which comprises sintering an atomized powder. The target and the method provide a target having an extremely fine and uniform structure having a high density and being produced by the sintering method, in place of a conventional bulk metal glass produced by the rapid cooling of a molten metal, which has a coarse crystal structure and requires a high cost for its production.

Inventors:

INOUE AKIHISA (JP)
KIMURA HISAMICHI (JP)
SASAMORI KENICHIRO (JP)
YAHAGI MASATAKA (JP)
NAKAMURA ATSUSHI (JP)
TAKAHASHI HIDEYUKI (JP)

Application Number:

PCT/JP2004/010361

Publication Date:

February 10, 2005

Filing Date:

July 14, 2004

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NIKKO MATERIALS CO LTD (JP)
INOE AKIHISA (JP)
KIMURA HISAMICHI (JP)
SASAMORI KENICHIRO (JP)
YAHAGI MASATAKA (JP)
NAKAMURA ATSUSHI (JP)
TAKAHASHI HIDEYUKI (JP)

International Classes:

C22C5/00; C22C9/00; C22C16/00; C22C19/07; C22C21/10; C22C45/02; C22C45/10; C22F1/053; C23C14/34; (IPC1-7): C23C14/34; C22C16/00; C22C5/00; C22C9/00; C22C19/07; C22C45/02; C22C45/10

Domestic Patent References:

WO2002016663A1

2002-02-28

Foreign References:

JP2003003222A	2003-01-08
JP2000144380A	2000-05-26
JP2002212716A	2002-07-31
JPH0517868A	1993-01-26
JP2000207725A	2000-07-28
JP2002069550A	2002-03-08
JP2002363615A	2002-12-18

Other References: