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Title:
SPUTTERING TARGET AND METHODS OF MAKING SAME
Document Type and Number:
WIPO Patent Application WO2001042522
Kind Code:
A3
Abstract:
A target for use in sputtering may include a backing adapted to be operatively connected to a sputtering power source and an outer layer of a sputterable material carried by the backing. The sputterable material comprises a mixture of zinc and a second metal having a melting point less than that of the zinc. The zinc and the second metal are present in the sputterable material in metallic form and are arranged as discrete volumes of the second metal in a matrix of zinc. This target may be manufactured by simultaneously plasma spraying zinc metal and the second metal onto a backing to create an outer layer of a sputterable material carried by the backing. The target may be used by placing the target and a substrate in a sputtering chamber and applying power to the target while maintaining in the sputtering chamber a reactive atmosphere comprising oxygen, thereby depositing on a surface of the substrate a film comprising oxides of zinc and the second metal.

Inventors:
HARTIG KLAUS (US)
VANDERSTRAETEN JOHAN (BE)
Application Number:
PCT/US2000/042533
Publication Date:
May 02, 2002
Filing Date:
December 01, 2000
Export Citation:
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Assignee:
BEKAERT SA NV (BE)
HARTIG KLAUS (US)
VANDERSTRAETEN JOHAN (BE)
International Classes:
C22C18/00; C23C4/00; C23C4/08; C22C1/02; C23C14/34; (IPC1-7): C23C14/34; C23C14/08; C23C18/00
Domestic Patent References:
WO1992020832A11992-11-26
WO1999058736A21999-11-18
Foreign References:
DE19626732A11998-01-08
DE3318828A11984-11-29
Other References:
BERGMAN A ET AL: "THE EFFECT OF GRAVITY AND TEMPERATURE GRADIANTS ON PRECIPITATION INIMMISCIBLE ALLOYS", JOURNAL OF MATERIALS SCIENCE, CHAPMAN AND HALL LTD. LONDON, GB, vol. 23, no. 5, 1988, pages 1573 - 1579, XP000651932, ISSN: 0022-2461
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