Title:
SPUTTERING TARGET, OPTICAL FUNCTION FILM, AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2021/090662
Kind Code:
A1
Abstract:
This sputtering target contains 20 mass% or more of V and 5 mass% or more of N, and has a density ratio of 84% or higher. This optical function film (12) contains 20 at% or higher of each of V and N, and is such that the product n × k × d of the film thickness d, the visible-light-region refractive index n, and the visible-light-region extinction coefficient k is within a range of 30-150 (inclusive). In this method for manufacturing a sputtering target: a VN-containing raw-material powder is prepared, the raw-material powder containing 20 mass% or more of V and 5 mass% or more of N, and being such that the contained amount of powder having a grain diameter of 100 μm is 74 vol% or higher; and the VN-containing raw-material powder is pressed and then is sintered at a temperature of 1000°C or higher.
Inventors:
UMEMOTO KEITA (JP)
Application Number:
PCT/JP2020/039137
Publication Date:
May 14, 2021
Filing Date:
October 16, 2020
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C04B35/58; C23C14/06; G06F3/041
Foreign References:
| US5337191A | 1994-08-09 | |||
| JP2013190744A | 2013-09-26 | |||
| JP2015167025A | 2015-09-24 |
Other References:
LIAO M Y; GOTOH Y; TSUJI H; ISHIKAWA J: "Crystallographic structure and composition of vanadium nitride films deposited by direct sputtering of a compound target", J. VAC. SCI. TECHNOL. A, vol. 22, no. 1, pages 146 - 150, XP012073517
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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