SPUTTERING TARGET FOR PHASE-CHANGE MEMORY, FILM FOR PHASE CHANGE MEMORY FORMED BY USING THE TARGET, AND METHOD FOR PRODUCING THE TARGET

Title:

SPUTTERING TARGET FOR PHASE-CHANGE MEMORY, FILM FOR PHASE CHANGE MEMORY FORMED BY USING THE TARGET, AND METHOD FOR PRODUCING THE TARGET

Document Type and Number:

WIPO Patent Application WO/2003/071531

Kind Code:

A1

Abstract:

A sputtering target for a phase change memory characterized in that the target is composed of three or more elements, the main component is one or more selected from antimony, tellurium, and selenium, and the variation of the composition from the composition to be achieved is within ± 1.0 at% and a film for a phase change memory formed by using the target are disclosed. Impurities that are segregated and condensed at and near the interface between a memory point and a non-memory portion and causes reduction of number of rewrite operations, particularly impurity elements influencing the crystallization rate are decreased as few as possible. The composition variation of the target from the composition to be achieved and component segregation are reduced. Thus, a sputtering target for a phase change memory that enables improvement of the rewrite characteristics of the phase change memory and the crystallization rate and its production method are provided.

Inventors:

YAHAGI MASATAKA (JP)
SHINDO YUICHIRO (JP)
TAKAMI HIDEO (JP)

Application Number:

PCT/JP2002/012739

Publication Date:

August 28, 2003

Filing Date:

December 05, 2002

Export Citation:

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Assignee:

NIKKO MATERIALS CO LTD (JP)
YAHAGI MASATAKA (JP)
SHINDO YUICHIRO (JP)
TAKAMI HIDEO (JP)

International Classes:

C23C14/06; C23C14/34; G11B7/2433; G11B7/26; H01L45/00; (IPC1-7): G11B7/26; G11B7/24; C23C14/34

Foreign References:

JPH03162570A	1991-07-12
JPS63100632A	1988-05-02
JPS62114137A	1987-05-25
JPH0547053A	1993-02-26

Other References: