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Patent Searching and Data


Title:
SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/129648
Kind Code:
A1
Abstract:
The present invention provides a sputtering target that exhibits excellent machining properties and that makes it possible to form a compound film comprising Cu and Ga as main components thereof. The sputtering target is characterized by comprising, with respect to all of the metal elements in the sputtering target, 15.0-50.0 atom percent of Ga, a total of 0.1-10.0 atom percent of one or more metal elements selected from among Al, Zn, Sn, Ag, and Mg, and a remainder of Cu and unavoidable impurities.

Inventors:
ZHANG SHOUBIN (JP)
UMEMOTO KEITA (JP)
Application Number:
JP2014/054468
Publication Date:
August 28, 2014
Filing Date:
February 25, 2014
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; B22F3/14; B22F3/15; C22C1/04; C22C9/00; C22F1/08; C22C28/00; C22F1/00; C22F1/16
Domestic Patent References:
WO2011001974A12011-01-06
WO2011013471A12011-02-03
WO2011010529A12011-01-27
WO2012005098A12012-01-12
Foreign References:
JP2005533187A2005-11-04
JP2011149039A2011-08-04
JP2011214140A2011-10-27
JP2012229454A2012-11-22
JP2000073163A2000-03-07
JP3249408B22002-01-21
JP2009283569A2009-12-03
Other References:
A. ROMEO ET AL.: "Development of thin-film Cu (In,Ga)Se2 and CdTe solar cells", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, vol. 12, no. 2-3, March 2004 (2004-03-01), pages 93 - 111, XP055024654
See also references of EP 2960355A4
A. ROMEO: "Development of Thin-film Cu(ln,Ga)Se and CdTe Solar Cells", PROG. PHOTOVOLT: RES. APPL., vol. 12, 2004, pages 93 - 111, XP055024654, DOI: doi:10.1002/pip.527
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
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