Title:
SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/213185
Kind Code:
A1
Abstract:
The sputtering target according to the present invention comprises an alloy of Al and Sc, wherein the content of Sc is 25-50 atom%, the content of oxygen is 2000 ppm by mass or less, and the variation in Vickers hardness (Hv) is 20% or less.
Inventors:
MORII YASUSHI (JP)
KOIDO YOSHIMASA (JP)
KOIDO YOSHIMASA (JP)
Application Number:
PCT/JP2017/021180
Publication Date:
December 14, 2017
Filing Date:
June 07, 2017
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C22C21/00; C22C28/00; C22F1/04; C22F1/16; C22F1/00
Foreign References:
| JP2010031378A | 2010-02-12 | |||
| JP2015096647A | 2015-05-21 | |||
| JPH113873A | 1999-01-06 | |||
| JP2004204284A | 2004-07-22 | |||
| JP2003166053A | 2003-06-13 | |||
| JP2001303243A | 2001-10-31 | |||
| JPH02115364A | 1990-04-27 | |||
| US20100285332A1 | 2010-11-11 | |||
| JP2015096647A | 2015-05-21 | |||
| JP2012012673A | 2012-01-19 |
Other References:
KATO ET AL.: "DENSO Technical Review", vol. 202-207, 2012, DENSO CORPORATION, article "Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films prepared by Dual Reactive Co-Sputtering"
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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