Title:
SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/179556
Kind Code:
A1
Abstract:
[Problem] To provide an IGZO sputtering target that suppresses arcing. [Solution] Provided is an IGZO sputtering target containing In, Ga, Zn and O, wherein, in terms of atomic ratio, 0.30≤In/(In+Ga+Zn)≤0.36, 0.30≤Ga/(In+Ga+Zn)≤0.36, and 0.30≤Zn/(In+Ga+Zn)≤0.36 are satisfied, the IGZO sputtering target being characterized in that the relative density is at least 96%, crystal grains at the surface of the sputtering target have an average grain diameter of at most 30.0 μm, and the difference in grain diameter at the surface of the sputtering target is at most 20% (1.0≤Dmax/Dmin≤1.2).
Inventors:
KAJIYAMA JUN (JP)
Application Number:
PCT/JP2017/039402
Publication Date:
October 04, 2018
Filing Date:
October 31, 2017
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; C04B35/01; H01L21/363
Domestic Patent References:
| WO2011061938A1 | 2011-05-26 | |||
| WO2016017605A1 | 2016-02-04 | |||
| WO2016152349A1 | 2016-09-29 | |||
| WO2009151003A1 | 2009-12-17 |
Foreign References:
| JP2015189632A | 2015-11-02 | |||
| JP2014125648A | 2014-07-07 |
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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