Title:
SPUTTERING TARGET STRUCTURE AND SPUTTERING TARGET STRUCTURE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2016/051771
Kind Code:
A1
Abstract:
The present invention reduces particles. This sputtering target structure is provided with a sputtering target, and a backing plate that holds the sputtering target. The surface of the sputtering target and/or the surface of the backing plate is provided with a region including a plurality of recesses having an average diameter of 50-300 μm, and an average depth of 5-30 μm. The arithmetic average roughness Ra of the surface of the region including the recesses is 10-20 μm.
Inventors:
KOMATSU TOORU (JP)
NAKASHIMA NOBUAKI (JP)
NAKASHIMA NOBUAKI (JP)
Application Number:
PCT/JP2015/004941
Publication Date:
April 07, 2016
Filing Date:
September 29, 2015
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
C23C14/34; B24C1/00; B24C1/06; C23C4/08; C23C4/12; C23C4/18; C23C14/00
Domestic Patent References:
| WO2008117482A1 | 2008-10-02 | |||
| WO2002040733A1 | 2002-05-23 |
Attorney, Agent or Firm:
SAKURA PATENT OFFICE, p. c. (JP)
Patent business corporation cherry tree international patent firm (JP)
Patent business corporation cherry tree international patent firm (JP)
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