Title:
SPUTTERING TARGET FOR TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2018/211792
Kind Code:
A1
Abstract:
This sputtering target for transparent conductive film comprises an oxide sintered compact having, as constituent elements, In, Sn, Si and O, the content ratio of In being greater than 25.0% by mass but not more than 82.0% by mass in terms of In2O3, the content ratio of Sn being 15.0% by mass to 65.0% by mass in terms of SnO2, and the content ratio of Si being at least 3.0% by mass but less than 10.0% by mass in terms of SiO2. This sputtering target for conductive film has low resistivity, it is possible to perform DC sputtering, and by sputtering it is possible to form a transparent conductive film having high film resistivity and high chemical resistance.
Inventors:
YANO TOMOYASU (JP)
KOHIRA TOSHIHIRO (JP)
TATEYAMA SHINICHI (JP)
NAKAMURA SHINICHIRO (JP)
KOHIRA TOSHIHIRO (JP)
TATEYAMA SHINICHI (JP)
NAKAMURA SHINICHIRO (JP)
Application Number:
PCT/JP2018/008974
Publication Date:
November 22, 2018
Filing Date:
March 08, 2018
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO (JP)
International Classes:
C23C14/34; C04B35/01; C04B35/457; C23C14/08; H01B5/14; H01B13/00
Foreign References:
| JP4424889B2 | 2010-03-03 | |||
| JP2007138266A | 2007-06-07 | |||
| JP2005135649A | 2005-05-26 | |||
| JP2010198934A | 2010-09-09 | |||
| JP2004123479A | 2004-04-22 | |||
| JPS6410507A | 1989-01-13 | |||
| JPH10237632A | 1998-09-08 |
Attorney, Agent or Firm:
SSINPAT PATENT FIRM (JP)
Download PDF:
Previous Patent: MOBILE ELECTRONIC APPARATUS
Next Patent: SPUTTERING TARGET FOR TRANSPARENT CONDUCTIVE FILM
Next Patent: SPUTTERING TARGET FOR TRANSPARENT CONDUCTIVE FILM