Title:
SPUTTERING TARGET FOR TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2018/211793
Kind Code:
A1
Abstract:
This sputtering target for transparent conductive film comprises an oxide sintered compact having, as constituent elements, In, Sn, Si and O, or In, Si and O, the content ratio of In being 70.0% by mass to less than 85.0% by mass in terms of In2O3, the content of ratio of Sn being from 0% by mass to 10.0% by mass in terms of SnO2, and the content of Si being greater than 15.0% by mass but not exceeding 20.0% by mass in terms of SiO2. In X-ray diffraction measurement of this sputtering target, all of the Si appears as a peak of an indium silicate compound having a thortveitite structure. The sputtering target for conductive film of the present application has a low resistivity, DC sputtering can be carried out, and there is minimal occurrence of nodules and arcing. In addition, by sputtering it is possible to form a transparent conductive film having high film resistivity and high etching workability.
Inventors:
YANO TOMOYASU (JP)
KOHIRA TOSHIHIRO (JP)
TATEYAMA SHINICHI (JP)
NAKAMURA SHINICHIRO (JP)
KOHIRA TOSHIHIRO (JP)
TATEYAMA SHINICHI (JP)
NAKAMURA SHINICHIRO (JP)
Application Number:
PCT/JP2018/008975
Publication Date:
November 22, 2018
Filing Date:
March 08, 2018
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO (JP)
International Classes:
C23C14/34; C04B35/01; C23C14/08; H01B5/14; H01B13/00
Foreign References:
| JP2005135649A | 2005-05-26 | |||
| JP2007055841A | 2007-03-08 | |||
| JP2015013778A | 2015-01-22 | |||
| JP2004123479A | 2004-04-22 | |||
| JPS6410507A | 1989-01-13 |
Attorney, Agent or Firm:
SSINPAT PATENT FIRM (JP)
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