Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/054489
Kind Code:
A1
Abstract:
This sputtering target is characterized by: being mainly composed of Zn, Sn and O, and containing Zn and Sn in amounts such that the Zn/(Zn + Sn) atomic ratio is within the range of from 0.1 to 0.6 (inclusive); and comprising tin oxide phases and tin zinc complex oxide phases as main phases, while also comprising tin metal phases. This sputtering target is also characterized in that: the amount of Sn present as the tin metal phases is within the range of from 1.0 mol% to 8.0 mol% (inclusive); the average of the circle-equivalent diameters of the tin metal phases is 1 μm or less; and the relative density is 95% or more.
More Like This:
WO/2013/091761 | HOMOGENEOUS HIPIMS COATING METHOD |
WO/2023/121281 | METHOD FOR MANUFACTURING ALUMINUM SPUTTERING TARGET |
Inventors:
KIUCHI KAHO (JP)
MUTSUDA YUYA (JP)
MUTSUDA YUYA (JP)
Application Number:
PCT/JP2018/034211
Publication Date:
March 21, 2019
Filing Date:
September 14, 2018
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C04B35/457
Foreign References:
JP2014167162A | 2014-09-11 | |||
JP2014167163A | 2014-09-11 | |||
JP2013177260A | 2013-09-09 | |||
JP2017110291A | 2017-06-22 | |||
JP2012066968A | 2012-04-05 | |||
JP2007314364A | 2007-12-06 | |||
JP2012121791A | 2012-06-28 | |||
JP2018053311A | 2018-04-05 |
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
Download PDF: