Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2020/105676
Kind Code:
A1
Abstract:
A sputtering target according to the present invention contains Ge, Sb, and Te; has a high-oxygen region (11) having a high oxygen concentration and a low-oxygen region (12) having an oxygen concentration that is lower than in the high-oxygen region (11); and has a structure in which the low-oxygen region (12) is dispersed in island form in a matrix of the high-oxygen region (11). Voids with a diameter of 0.5-5.0 μm may be present in the sputtering target in the range of 2-10 in an area of 0.12 mm2 for the average density.
Inventors:
HAYASHI YUJIRO (JP)
KONDO YUICHI (JP)
SHOJI MASAHIRO (JP)
KONDO YUICHI (JP)
SHOJI MASAHIRO (JP)
Application Number:
PCT/JP2019/045407
Publication Date:
May 28, 2020
Filing Date:
November 20, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C1/04; C22C12/00; C22C28/00; C22C30/00
Domestic Patent References:
| WO2015146394A1 | 2015-10-01 |
Foreign References:
| JP2014029025A | 2014-02-13 | |||
| JPH0570937A | 1993-03-23 | |||
| JP2005117002A | 2005-04-28 | |||
| JP2001123267A | 2001-05-08 |
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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