Title:
SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2022/045196
Kind Code:
A1
Abstract:
This sputtering target is constructed by joining a sputtering target material and a backing material together via a solder layer, and is characterized in that the solder layer has a composition containing In in the range of 9.0 mass% to 15.0 mass%, Zn in the range of 4.0 mass% to 7.5 mass%, and the rest Sn and inevitable impurities.
Inventors:
OKANO SHIN (JP)
OHTOMO TAKESHI (JP)
OHTOMO TAKESHI (JP)
Application Number:
PCT/JP2021/031162
Publication Date:
March 03, 2022
Filing Date:
August 25, 2021
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; B23K1/00; B23K35/26; C22C13/00; C22C28/00
Domestic Patent References:
| WO2014034863A1 | 2014-03-06 |
Foreign References:
| US20130029178A1 | 2013-01-31 | |||
| JPH09174278A | 1997-07-08 | |||
| CN102409300A | 2012-04-11 |
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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