Title:
SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES
Document Type and Number:
WIPO Patent Application WO2003008656
Kind Code:
B1
Abstract:
The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
Inventors:
WU CHI TSE (US)
YI WUWEN (US)
HIDDEN FREDERICK B (US)
YI WUWEN (US)
HIDDEN FREDERICK B (US)
Application Number:
PCT/US2001/045650
Publication Date:
April 08, 2004
Filing Date:
October 09, 2001
Export Citation:
Assignee:
HONEYWELL INT INC (US)
WU CHI TSE (US)
YI WUWEN (US)
HIDDEN FREDERICK B (US)
WU CHI TSE (US)
YI WUWEN (US)
HIDDEN FREDERICK B (US)
International Classes:
B21J5/00; B21J5/02; B21J13/02; B21K21/00; B21K23/00; B22D7/00; B22D21/00; B22D27/08; C22F1/00; C22F1/08; C23C14/34; C23C14/35; H01J37/34; (IPC1-7): C23C14/34; C22F1/00; C22F1/08; B22D7/00; B22D27/08; B21J5/02
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