Title:
SRAM DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2013/117097
Kind Code:
A1
Abstract:
An SRAM device and a manufacturing method therefor. The SRAM device comprises: a substrate (100); a well region (101) located on the substrate (100), the well region (101) being separated by a shallow groove (102); a source region (103) located in the well region (101) and adjacent to the shallow groove (102); an interlayer dielectric (104) located on the well region (101), a contact hole (105) connected to the source region (103) being provided in the interlayer dielectric (104), and the contact hole (105) making the source region (103) be arranged in symmetric manner along the direction of a line linking the source region (103) and the shallow groove (102). For the SRAM device, less electricity is leaked at an edge of the device, and the device yield is high.
Inventors:
SUN XIAOFENG (CN)
DING HAIBIN (CN)
HAN LING (CN)
DING HAIBIN (CN)
HAN LING (CN)
Application Number:
PCT/CN2012/085446
Publication Date:
August 15, 2013
Filing Date:
November 28, 2012
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L27/11; H01L21/8244
Foreign References:
| CN101924108A | 2010-12-22 | |||
| US4987090A | 1991-01-22 | |||
| US20080153295A1 | 2008-06-26 |
Attorney, Agent or Firm:
ADVANCE CHINA I.P. LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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