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Title:
STACKED CROSS-POINT PHASE CHANGE MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/103555
Kind Code:
A1
Abstract:
A stacked phase change memory structure having a cross-point architecture is provided. The stacked phase change memory structure includes at least two phase change material element-containing structures (MS1, MS2) stacked one atop the other. Each phase change material element-containing structure (MS1, MS2) of the plurality of phase change material element-containing structures (MS1, MS2) has a cross-point architecture and includes, from bottom to top, at least one bottom electrode (12L), a phase change material element (14L), and a top electrode (16L).

Inventors:
CHENG KANGGUO (US)
RADENS CARL (US)
XIE RUILONG (US)
LI JUNTAO (US)
Application Number:
PCT/CN2022/123050
Publication Date:
June 15, 2023
Filing Date:
September 30, 2022
Export Citation:
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Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
International Classes:
G11C13/00
Foreign References:
CN103370745A2013-10-23
CN102449701A2012-05-09
CN113629099A2021-11-09
CN113096706A2021-07-09
CN112567525A2021-03-26
CN112840460A2021-05-25
CN111739904A2020-10-02
CN112041997A2020-12-04
CN112655092A2021-04-13
CN113439335A2021-09-24
JP2012244109A2012-12-10
US20110147690A12011-06-23
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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