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Title:
STARTING CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2019/207878
Kind Code:
A1
Abstract:
An objective of the present invention is to provide a starting circuit with which a reduced area and lowered power consumption can both be achieved with a more desirable configuration. Provided is a starting circuit (100) comprising: an nMOS transistor (NM11) in which the gate is grounded and a threshold voltage approaches 0V; and a resistor (RSTUP) which is present between the source of the MOS transistor and a ground. The potential of the drain of the MOS transistor is controlled according to a first signal (IBIAS) outputted from a device (200) to be driven, and the transmission of a second signal (start signal) for starting the device is controlled according to the potential of the drain.

Inventors:
WATANABE, Hiroyuki (4-14-1 Asahi-cho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
Application Number:
JP2019/003051
Publication Date:
October 31, 2019
Filing Date:
January 30, 2019
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1, Asahi-cho Atsugi-sh, Kanagawa 14, 〒2430014, JP)
International Classes:
G05F3/26; H03F3/347
Foreign References:
US20070164722A12007-07-19
JP2013037435A2013-02-21
JP2008154020A2008-07-03
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (Toranomon Mitsui Building, 8-1 Kasumigaseki 3-chome, Chiyoda-k, Tokyo 13, 〒1000013, JP)
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