Title:
STARTING MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPOSED OF ORGANIC MANGANESE COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID STARTING MATERIAL FOR CHEMICAL VAPOR DEPOSITION
Document Type and Number:
WIPO Patent Application WO/2020/255913
Kind Code:
A1
Abstract:
The present invention relates to a starting material for chemical vapor deposition for producing a manganese thin film or a manganese compound thin film by a chemical vapor deposition method, said starting material for chemical vapor deposition being composed of an organic manganese compound represented by formula AA in chemical formula 1, said organic manganese compound being obtained by coordinating a cyclopentadienyl ligand (L1) and an isocyanide ligand (L2) to manganese. The present invention has basic characteristics as a starting material for chemical vapor deposition, and enables the formation of a manganese thin film with use of a reducing gas such as hydrogen as a reaction gas. (In the formula, each of substituents R1-R5 in the cyclopentadienyl ligand (L1) represents a hydrogen atom or a linear, branched or cyclic alkyl group having one to four carbon atoms (inclusive); and substituent R6 in the isocyanide ligand (L2) represents a linear, branched or cyclic alkyl group having one to four carbon atoms (inclusive).)
Inventors:
HARADA RYOSUKE (JP)
TSUGAWA TOMOHIRO (JP)
SHIGETOMI TOSHIYUKI (JP)
LEE SEUNG-JOON (JP)
KATKAR KETAN BABAN (JP)
TSUGAWA TOMOHIRO (JP)
SHIGETOMI TOSHIYUKI (JP)
LEE SEUNG-JOON (JP)
KATKAR KETAN BABAN (JP)
Application Number:
PCT/JP2020/023378
Publication Date:
December 24, 2020
Filing Date:
June 15, 2020
Export Citation:
Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C16/18; C07F13/00; H01L21/285
Domestic Patent References:
| WO2013191065A1 | 2013-12-27 |
Foreign References:
| JP2013508979A | 2013-03-07 | |||
| JP2019031508A | 2019-02-28 |
Attorney, Agent or Firm:
TANAKA AND OKAZAKI (JP)
Download PDF: