STARTING MATERIAL FOR THIN FILM FORMATION BY ATOMIC LAYER DEPOSITION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM

Title:

STARTING MATERIAL FOR THIN FILM FORMATION BY ATOMIC LAYER DEPOSITION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM

Document Type and Number:

WIPO Patent Application WO/2023/171489

Kind Code:

A1

Abstract:

Provided is a starting material for thin film formation by atomic layer deposition, the starting material containing a molybdenum compound represented by general formula (1).　(In the formula, R1–R5 each independently represent a hydrogen atom or a C1–5 alkyl group.)

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Inventors:

HATASE MASAKO (JP)
MITSUI CHIAKI (JP)
TAKEDA KEISUKE (JP)
FUSE WAKANA (JP)

Application Number:

PCT/JP2023/007549

Publication Date:

September 14, 2023

Filing Date:

March 01, 2023

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Assignee:

ADEKA CORP (JP)

International Classes:

C07F11/00; C23C16/18; C23C16/455; H01L21/285

Foreign References:

JP2021510770A	2021-04-30
JP2022504527A	2022-01-13
JP2002060944A	2002-02-28
US20210047726A1	2021-02-18
US20170330748A1	2017-11-16

Other References:

DRAKE TASHA L.; STAIR PETER C.: "Vapor deposition of molybdenum oxide using bis(ethylbenzene) molybdenum and water", JOURNAL OF VACUUM SCIENCE, vol. 34, no. 5, 15 August 2016 (2016-08-15), XP012210460, ISSN: 0734-2101, DOI: 10.1116/1.4959532

Attorney, Agent or Firm:

SOGA, Michiharu et al. (JP)

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