STATIC ELECTRCITY CONTROL DEVICE FOR SEMICONDUCTOR PROCESSING SYSTEM

WIPO Patent Application WO/2023/224235

A1

A static electricity control device for injecting static electricity into a substrate disposed in a vacuum chamber or removing static electricity formed on the substrate in a semiconductor processing system, according to an embodiment, comprises: a charged particle generation unit, disposed on an upper side inside the vacuum chamber, that generates charged particles including positive ions and electrons by generating a vacuum ultraviolet ray (VUV) and reacting the VUV with a process gas inside the vacuum chamber; a grid provided with a plurality of holes, disposed on a lower side of the charged particle generation unit, that selectively pass the type of charged particles downward according to an input voltage; a substrate support, disposed below the grid and having the substrate positioned thereon, that is made of a conductive material and guides the charged particles passing through the grid toward the substrate at a predetermined density according to an input bias voltage; and a static electricity control unit that controls the static electricity of the substrate by supplying a pulsed voltage to at least one of the grid and the substrate support, wherein the grid and the substrate support are arranged so as to have a separation distance that is within four times the mean free path of the process gas according to environmental conditions of the vacuum chamber.

PARK HEUNG-GYUN (KR)

PCT/KR2023/003460

November 23, 2023

March 15, 2023

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NEXTIN INC (KR)

H01J37/32; H01J37/08; H05F3/06

KR102358914B1	2022-02-08
KR102322101B1	2021-11-04
KR102118604B1	2020-06-03
JP2006216583A	2006-08-17
KR20100114718A	2010-10-26

ISIS IP LAW LLC (KR)

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