| JP4826254 | Switching element |
| JP4010091 | Memory device and its manufacturing method |
| WO/2002/091495 | MOLECULAR MEMORY DEVICE |
| Claims 1. The cell of memory of non-volatile memory contains an electronic switch with two stable conditions, in which respectively are arranged electrically conductive and dielectric structures, differing that the cell contains a dielectric layer on which the film of a certain material is created, it in thickness contains one or two or three or a lot of atomic layers, in proximity of a surface of this film the electrode is located, by two opposite ends of a film two current - carrying wires are brought for supply to a film of an electric current, at a surface of film between a film and an electrode the substance is located which in usual conditions is not chemisorbed on a film and does not enter into chemical reaction with a material of film, this substance and all elements of a cell are located in hermetically sealed case, in the presence of an electrode, a film and substance, which is located at a surface of film, in electric field of the corresponding size and polarity and/or at a transmission in a film of an electric current of the corresponding size, the substance being at a surface of a film has ability of chemisorption on a film or a chemical compound with a substance of a film, owing to what, the film has possibility to change an electrical resistance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of 'optical refraction or a quantitative index of other physical properties and to keep the new changed value, when a film with the chemisorbed or chemically attached substance and an electrode are in electric field of the corresponding size and polarity and/or voltage is attached to a film with the chemisorbed or chemically attached substance and will pass an electric current of the corresponding size, the chemisorbed or chemically attached substance has ability of a desorption by electric field or evaporation by electric field from a film or the chemisorbed substance has an ability of a usual chemical desorption, or received as a result of chemical interaction of substance of a film with substance located at a surface of this film the compound has ability of chemical disintegration, owing to what, the film has possibility to restore primary an electrical conductance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties and to keep the restored value. 2. A storage cell as claimed in claim 1, wherein except a film on a surface of a dielectric layer, from the opposite side from a film is imposed the electrical conductor which is under in the same electric potential concerning an electrode as a film. 3. A storage cell, as claimed in claim 1 and 2, wherein in a cell is used or an electrode or instead of an electrode in proximity of the surface of a film a second dielectric layer is located, on the surface of which, on the second opposite surface in relation to the surface located on the side of the film, the electrical conductor is imposed, on the surface of the second dielectric layer being on the side of the film two current-carrying wires are located, which are at a certain distance from each other, i. e. between them there is an open surface of a dielectric layer, which is located opposite to the film, when the film and an electrode or a film and an electrical conductor imposed on the second dielectric layer are in electric field of the corresponding size and polarity, at the same time to a film can be delivered or not an electric current of the corresponding size, the film has an ability of evaporation or desorption by electric field and precipitation on an electrode or on the second dielectric layer between two current- carrying wires in the form of a film, owing to what, a area located between two current-carrying wires on the first and on the second dielectric layer have the possibility to change an electrical conductance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties and to keep the new changed value, when the film is precipitated on the electrode or on the second dielectric layer and the electrode with a film or the film located on the second dielectric layer and an electrical conductor of the first dielectric layer are in the electric field of the corresponding size and polarity, at the same time to a film can be delivered or not an electric current of the corresponding size, the film has an ability of evaporation or desorption by electric field and precipitation on the first dielectric layer between the two current-carrying wires in the form of a film, owing to what, the area located between the two current-carrying wires on the first and on the second dielectric layer have the possibility to restore primary an electric resistance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties and to keep the restored value. 4. A storage cell as claimed in claim 1 or 2 or 3, wherein only one current-carrying wire on the only one side is brought to a film or no current-carrying wires are brought to the film. 5. A storage cell as claimed in claim 1, wherein the cell does not contain an electrode. |
The invention belongs to the field of technology of information memories and can be used as a memory cell.
Among known today non - volatile memories the most widespread is the so - called flash memory. Its storage cell represents a field - effect transistor in which the so - called floating gate is added, which represents isolated area separated by dielectric. The cell of flash memory occupies a certain, quite big area, reduction of which is limited. Certain measures are taken to increase integration of storage cells, which in turn complicates the recording - reading mechanism and reduces owing to speed of a memory. In memory of this type restrictedly also quantity of cycles of information record - erasure.
The cell of memory offered by me is free from shortcomings mentioned above. Reduction of its sizes possibly to the physically possible limit, i. e. to the atomic level. Therefore the data recording density per unit of area has much higher value. Besides in comparison with existing cells of the flash memory, the cell of memory offered by me has higher speed. Raised is reliability of a memory and quantity of cycles of record - erasure. Besides, the production technology is very simple, owing to its production is cheap and prime cost of memory is low.
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Technical result of the invention is the increase in density of a data recording at unit of area, i. e. integration scales of storage elements and increase in speed of a cell of memory. Augmentation of reliability of a memory and quantity of cycles of record - erasure, as well as production technology simplification, reduction of the cost of production and reduction of prime cost of a memory. It is
1 reached by the corresponding design.
The cell of memory has the following design: On the surface of a layer of dielectric 2 (fig.l b)) is created the film 3 of a certain material, in thickness one or several atoms, i. e. the film in thickness contain one or several atomic layers. In one case electrical conductor 5 is imposed on surfaces of a layer of dielectric 2 on the opposite side from film 3 (fig.l a)), or in the second case, electrical conductor 5 in the device of a cell is not used (fig.l b)). In both cases electrode 1 is located in proximity to the surface of this film 3. The film 3 and an electrical conductor 5 are under electric potential of identical polarity in relation to electrode 1. The cell does not contain electrode 1 in the third case (fig.l c)). To a film 3 from two opposite sides are brought two current - carrying wires 4 for a supply to a film of an electric current, or only one wire is brought to a film 3 on the one side, or no wires are brought to a film 3 and an electric field can be enclosed between an electrical conductor 5 and an electrode 1. In the fourth case in a cell instead of an electrode 1 the second dielectric layer 2a is used (fig.l d)), on one surface of which the electrical conductor 5a is imposed, and on the second opposite surface two current-carrying wires 4a are located, which are at a certain distance from each other, i. e. between them there is an open surface of a dielectric layer 2a. At the surface of the film 3, between a film 3 and an electrode 1 , the substance is located, which in usual conditions is not chemisorbed on a film 3 and does not come into chemical reaction with a material of film. This substance and all details of the cell are located in hermetically sealed case 6. In the case of existence between electrode 1 and film 3 with a electrical conductor 5 or without it of electric field of the corresponding size and polarity, owing to the developed electric processes, at electrical puncture or autoionization or ionization, or polarization of the substance located between film 3 and electrode 1, or in case of an electric discharge or at emergence in this substance of free radicals or atoms with not paired electrons and or at transmission in film 3 of an electric current of the corresponding size, owing to thermal effect, there is
2 chemisorption of the substance located at a surface of film 3 to this film 3 or a chemical compound of this substance with the substance of film 3, owing to what, an electrical resistance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties of a film 3 is changed. When in the electric field of the corresponding size and polarity will be an electrode 1 and a film 3 with the chemisorbed or chemically attached substance, together with an electrical conductor 5 or without it, occurs a desorption by electric field or evaporation by electric field of the chemisorbed or chemically attached substance from a film 3 or the rupture of a chemical bond between a film 3 and the attached substance and/or if voltage of the corresponding size is brought to a film 3 with the chemisorbed or chemically attached substance and will pass an electric current in it, there will occur a chemical desorption of the chemisorbed substance from a surface of a film 3 or a rupture of a chemical bond between a film and the attached substance, owing to what, an electrical conductance or a dielectric permeability or a magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties of film 3 will be restored. Or in the second case, when the film 3 and an electrode 1 or a film and an electrical conductor 5a imposed on the second dielectric layer 2a are in electric field of the corresponding size and polarity, at the same time to a film can be delivered or not an electric current of the corresponding size, takes place a film 3 evaporation by electric field and precipitation on an electrode 1 or on the second dielectric layer 2a between the two current-carrying wires 4a in the form of a film, under the influence of forces of electric field, as a result occurs a change to electric resistance or dielectric permeability or magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties of the area, located between the two current-carrying wires 4, 4a on the first and on the second
3 dielectric layers 2, 2a. If the film is precipitated on the electrode 1 or on the second dielectric layer 2a and an electrode with a film or the film located on the second dielectric layer 2a and an electrical conductor 5 of the first dielectric layer 2 are in electric field of the corresponding size and polarity, at the same time to a film can be delivered or not an electric current of the corresponding size, takes place a film evaporation by electric field and precipitation on the first dielectric layer 2 between the two current-carrying wires 4 in the form of a film, under the influence of forces of electric field, as a result primary electric resistance or dielectric permeability or magnetic permeability or an extent of optical reflection or a degree of optical transparency or an index of optical refraction or a quantitative index of other physical properties of the area located between the current-carrying wires 4, 4a on the first and on the second dielectric layers 2, 2a is restored.
Without influence both statuses and quantitative indices of physical properties of a film or a location of precipitation are steady, and by means of influence one status of a film or a location of precipitation can be changed to another, it gives the chance to use the mentioned system as a memory cell.
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