Title:
STORAGE CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/035616
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a storage circuit and a memory. The storage circuit may at least comprise: a plurality of storage blocks, wherein each of the storage blocks comprises a first storage sub-block, a second storage sub-block and a third storage sub-block, which are arranged in sequence; the second storage sub-block comprises a first storage portion and a second storage portion; the first storage sub-block and the second storage portion are used for storing high bytes; and the first storage portion and the third storage sub-block are used for storing low bytes. The embodiments of the present disclosure are conducive to improving the integration level and capacity of a storage circuit without changing the external dimensions.
Inventors:
CHI SUNGSOO (CN)
Application Number:
PCT/CN2022/087420
Publication Date:
March 16, 2023
Filing Date:
April 18, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C16/00
Foreign References:
| US5317535A | 1994-05-31 | |||
| US20210173559A1 | 2021-06-10 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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