Title:
STORAGE DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/073333
Kind Code:
A1
Abstract:
Provided is a novel storage device. The storage device has first wiring, second wiring, and first memory cells. The first memory cells each comprise a first transistor and a first magnetic tunnel junction element. One of a source and a drain of the first transistor is electrically connected to the first wiring. The other of the source and drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction element. The other terminal of the first magnetic tunnel junction element is electrically connected to the second wiring. The first transistor has an oxide semiconductor in a channel formed region.
Inventors:
OIKAWA YOSHIAKI (JP)
MIYAGUCHI ATSUSHI (JP)
UOCHI HIDEKI (JP)
MIYAGUCHI ATSUSHI (JP)
UOCHI HIDEKI (JP)
Application Number:
PCT/IB2018/057627
Publication Date:
April 18, 2019
Filing Date:
October 02, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L21/8239; H01L27/105; H01L29/786; H01L29/82; H01L43/08
Foreign References:
| JP2015228493A | 2015-12-17 | |||
| JP2012123875A | 2012-06-28 | |||
| JP2016136737A | 2016-07-28 | |||
| JP2006186109A | 2006-07-13 | |||
| JP2015165388A | 2015-09-17 | |||
| JP2013242960A | 2013-12-05 | |||
| JP2013016746A | 2013-01-24 |
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