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Patent Searching and Data


Title:
STORAGE DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/186323
Kind Code:
A1
Abstract:
Provided is a storage device having a long data retention time and high reliability. The storage device has a driver circuit and a plurality of memory cells, the memory cells have a transistor and a capacitance element, and the transistor has a metal oxide in a channel formation area. The transistor has a first gate and a second gate and, during the period that the memory cells retain data, a negative potential is applied to the transistor first gate and second gate.

Inventors:
YAMAZAKI, Shunpei (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
KATO, Kiyoshi (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
ISHIZU, Takahiko (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
ONUKI, Tatsuya (398, Hase, Atsugi-sh, Kanagawa 36, 〒2430036, JP)
Application Number:
IB2019/052244
Publication Date:
October 03, 2019
Filing Date:
March 20, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (398 Hase, Atsugi-shi Kanagawa, 36, 〒2430036, JP)
International Classes:
G11C11/408; G11C11/405; G11C11/4074; H01L29/786
Domestic Patent References:
WO1998058382A11998-12-23
Foreign References:
JP2017182867A2017-10-05
JP2009070480A2009-04-02
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