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Patent Searching and Data


Title:
STORAGE DEVICE AND STORAGE DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/071982
Kind Code:
A1
Abstract:
This storage device has: a columnar insulating material layer (180); a film (189), which is formed around an upper portion of the columnar insulating material layer, and in which resistance changes; a lower electrode (184), which is formed around a lower portion of the columnar insulating material layer, and which is connected to the variable resistance film; a reset gate insulating film (197) that surrounds the variable resistance film; and a reset gate (198a) that surrounds the reset gate insulating film. Consequently, a structure of the storage device, which is capable performing resetting using the reset gate, and which has reduced cross sectional areas of the variable resistance film and the lower electrode, said cross sectional areas being in the direction in which a current flows, and a method for manufacturing the storage device are provided.

Inventors:
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
Application Number:
PCT/JP2013/080719
Publication Date:
May 21, 2015
Filing Date:
November 13, 2013
Export Citation:
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Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
International Classes:
H01L45/00; H01L27/105
Domestic Patent References:
WO2009096363A12009-08-06
WO2013093988A12013-06-27
WO2013038553A12013-03-21
Foreign References:
JP2012186424A2012-09-27
JP2011199017A2011-10-06
JP2012238348A2012-12-06
Attorney, Agent or Firm:
KIMURA MITSURU (JP)
Mitsuru Kimura (JP)
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