Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/190071
Kind Code:
A1
Abstract:
A storage device according to one embodiment of the present disclosure is provided with: a plurality of first wiring layers which extend in one direction; a plurality of second wiring layers which extend in another direction; and a plurality of memory cells which are provided in regions respectively facing the plurality of first wiring layers and the plurality of second wiring layers. Each one of the plurality of memory cells comprises a selective element layer, a storage element layer and an intermediate electrode layer that is arranged between the selective element layer and the storage element layer. At least one of the selective element layer, the storage element layer and the intermediate electrode layer is formed as a common layer for a plurality of memory cells that extend in the one direction or in another direction, while being adjacent to each other; and the intermediate electrode layer is configured to contain a nonlinear resistive material.
Inventors:
NONOGUCHI SEIJI (JP)
ARATANI KATSUHISA (JP)
OHBA KAZUHIRO (JP)
ARATANI KATSUHISA (JP)
OHBA KAZUHIRO (JP)
Application Number:
PCT/JP2018/010255
Publication Date:
October 18, 2018
Filing Date:
March 15, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L27/11507; H01L27/11514; H01L45/00; H01L49/00
Domestic Patent References:
| WO2016129306A1 | 2016-08-18 | |||
| WO2014103577A1 | 2014-07-03 | |||
| WO2012001960A1 | 2012-01-05 | |||
| WO2012169198A1 | 2012-12-13 |
Foreign References:
| JP5558090B2 | 2014-07-23 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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