Title:
STORAGE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/026924
Kind Code:
A1
Abstract:
Disclosed is a storage element that can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties during high-speed operation. Also disclosed is a storage device. A storage layer (5) comprises an ion source layer (3). The ion source layer (3) contains an ion-conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element) and further contains Zr (zirconium), Cu (copper), and Al (aluminum) as metallic elements. The content of Al in the ion source layer (3) is 30 to 50 atomic%. The content of Zr is preferably 7.5 to 25 atomic%. Further, more preferably, the composition ratio of Zr to the total of the chalcogen elements contained in the ion source layer (= Zr (atomic%)/total of chalcogen elements (atomic%)) is in the range of 0.2 to 0.74.
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Inventors:
OHBA KAZUHIRO (JP)
MIZUGUCHI TETSUYA (JP)
YASUDA SHUICHIRO (JP)
MIZUGUCHI TETSUYA (JP)
YASUDA SHUICHIRO (JP)
Application Number:
PCT/JP2009/065055
Publication Date:
March 11, 2010
Filing Date:
August 28, 2009
Export Citation:
Assignee:
SONY CORP (JP)
OHBA KAZUHIRO (JP)
MIZUGUCHI TETSUYA (JP)
YASUDA SHUICHIRO (JP)
OHBA KAZUHIRO (JP)
MIZUGUCHI TETSUYA (JP)
YASUDA SHUICHIRO (JP)
International Classes:
H01L27/10; H01L45/00; H01L49/00
Foreign References:
| JP2006040946A | 2006-02-09 | |||
| JP2007280591A | 2007-10-25 | |||
| JP2009130344A | 2009-06-11 | |||
| JP2009043757A | 2009-02-26 |
Attorney, Agent or Firm:
FUJISHIMA Youichiro et al. (JP)
Yoichiro Fujishima (JP)
Yoichiro Fujishima (JP)
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