Title:
STORAGE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/146268
Kind Code:
A1
Abstract:
A storage element according to an embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite the first electrode; and a storage layer which is disposed between the first electrode and the second electrode, and includes at least one chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), a transition metal, and oxygen. The storage layer has non-linear resistivity and a rectifying property such that a low-resistance state is obtained when an applied voltage is greater than or equal to a predetermined threshold value voltage, and a high-resistance state is obtained when the applied voltage is a voltage less than the predetermined threshold value voltage.
Inventors:
OHBA KAZUHIRO (JP)
NONOGUCHI SEIJI (JP)
SEI HIROAKI (JP)
SONE TAKEYUKI (JP)
IKARASHI MINORU (JP)
NONOGUCHI SEIJI (JP)
SEI HIROAKI (JP)
SONE TAKEYUKI (JP)
IKARASHI MINORU (JP)
Application Number:
PCT/JP2018/044965
Publication Date:
August 01, 2019
Filing Date:
December 06, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| WO2014103577A1 | 2014-07-03 | |||
| WO2016111724A1 | 2016-07-14 | |||
| WO2016158429A1 | 2016-10-06 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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