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Title:
STORAGE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/146268
Kind Code:
A1
Abstract:
A storage element according to an embodiment of the present disclosure is provided with: a first electrode; a second electrode disposed opposite the first electrode; and a storage layer which is disposed between the first electrode and the second electrode, and includes at least one chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), a transition metal, and oxygen. The storage layer has non-linear resistivity and a rectifying property such that a low-resistance state is obtained when an applied voltage is greater than or equal to a predetermined threshold value voltage, and a high-resistance state is obtained when the applied voltage is a voltage less than the predetermined threshold value voltage.

Inventors:
OHBA, Kazuhiro (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
NONOGUCHI, Seiji (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
SEI, Hiroaki (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
SONE, Takeyuki (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
IKARASHI, Minoru (4-14-1 Asahicho, Atsugi-sh, Kanagawa 14, 〒2430014, JP)
Application Number:
JP2018/044965
Publication Date:
August 01, 2019
Filing Date:
December 06, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION (4-14-1, Asahicho Atsugi-sh, Kanagawa 14, 〒2430014, JP)
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
WO2014103577A12014-07-03
WO2016111724A12016-07-14
WO2016158429A12016-10-06
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (3F Sawada Building, 15-9 Shinjuku 1-chome, Shinjuku-k, Tokyo 22, 〒1600022, JP)
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