Title:
STORAGE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/089440
Kind Code:
A1
Abstract:
Provided is a storage element provided with a new configuration. This storage element has a first electrode, a first insulating layer, a semiconductor layer, a second insulating layer, and a second electrode which are stacked, wherein the first electrode, the first insulating layer, the semiconductor layer, the second insulating layer, and the second electrode each have a region that overlaps each other. An oxide semiconductor that is one type of metal oxide is used as the semiconductor layer. A material having an antiferroelectric property is used as the first insulating layer.
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Inventors:
BABA HARUYUKI (JP)
KUNITAKE HITOSHI (JP)
KUNITAKE HITOSHI (JP)
Application Number:
PCT/IB2022/060624
Publication Date:
May 25, 2023
Filing Date:
November 04, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B51/30; G11C11/22; H01L29/786
Domestic Patent References:
| WO2021024598A1 | 2021-02-11 | |||
| WO2009128133A1 | 2009-10-22 |
Foreign References:
| JP2013257934A | 2013-12-26 | |||
| JP2017059751A | 2017-03-23 |
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