Title:
STORAGE ELEMENT AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/089957
Kind Code:
A1
Abstract:
This storage element is provided with: a first electrode; a resistance change layer which is formed on the first electrode and includes at least tellurium, antimony, and germanium, and the resistance value of which changes; a first boundary layer formed between the first electrode and the resistance change layer; and a first thermal shielding layer formed between the first electrode and the first boundary layer, the first thermal shielding layer being electroconductive and including boron, and shielding heat transmission from the resistance change layer.
Inventors:
MIZUGUCHI TETSUYA (JP)
ARATANI KATSUHISA (JP)
OHBA KAZUHIRO (JP)
NAKAYAMA TETSUO (JP)
SEI HIROAKI (JP)
ARATANI KATSUHISA (JP)
OHBA KAZUHIRO (JP)
NAKAYAMA TETSUO (JP)
SEI HIROAKI (JP)
Application Number:
PCT/JP2022/035823
Publication Date:
May 25, 2023
Filing Date:
September 27, 2022
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H10B63/10; G11C11/56; G11C13/00; H10N70/00
Domestic Patent References:
| WO2018203459A1 | 2018-11-08 |
Foreign References:
| JP2020155560A | 2020-09-24 | |||
| JP2008252112A | 2008-10-16 | |||
| JP2007243170A | 2007-09-20 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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