Title:
STRIPPING METHOD FOR GALLIUM NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/159951
Kind Code:
A1
Abstract:
Disclosed in the present application is a stripping method for a gallium nitride substrate, which comprises obtaining a gallium nitride substrate in which a gallium nitride epitaxial structure is directly grown on an upper surface; carrying out scanning irradiation on the interior of the gallium nitride substrate via the epitaxial structure by using a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width less than 10-15s, and the distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than the thickness of the gallium nitride substrate; and separating the gallium nitride substrate at the decomposition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device. The present application uses a laser beam to irradiate a gallium nitride substrate in the direction from a gallium nitride epitaxial structure to the gallium nitride substrate, so that a thermal decomposition reaction occurs in the gallium nitride substrate and the gallium nitride substrate is separated at the decomposition layer, and a pure stripped gallium nitride substrate and a semiconductor device are obtained, that is, stripping of the gallium nitride substrate is achieved while the semiconductor device is obtained. The stripped gallium nitride substrate can be recycled so as to reduce the cost of gallium nitride substrates.
Inventors:
GUO FEN (CN)
SU KANG (CN)
MAN HONGTAO (CN)
LI TUO (CN)
SU KANG (CN)
MAN HONGTAO (CN)
LI TUO (CN)
Application Number:
PCT/CN2022/122735
Publication Date:
August 31, 2023
Filing Date:
September 29, 2022
Export Citation:
Assignee:
INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO LTD (CN)
International Classes:
H01L21/335; B23K26/53; H01L21/268; H01L21/683
Foreign References:
| CN114220740A | 2022-03-22 | |||
| CN112397571A | 2021-02-23 | |||
| CN105006446A | 2015-10-28 | |||
| US7998836B1 | 2011-08-16 | |||
| JP2018165225A | 2018-10-25 |
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (CN)
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