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Title:
STRUCTURE, FABRICATION, AND CORRECTIVE TEST OF ELECTRON-EMITTING DEVICE HAVING ELECTRODE CONFIGURED TO REDUCE CROSS-OVER CAPACITANCE AND/OR FACILITATE SHORT-CIRCUIT REPAIR
Document Type and Number:
WIPO Patent Application WO2003050848
Kind Code:
A3
Abstract:
An electron-emitting device (20, 70, 80, or 90) contains an electrode, either a control electrode (38) or an emitter electrode (32), having a specified portion situated off to the side of the bulk of the electrode. For a control electrode, the specified portion is an exposure portion (38EA or 38EB) having openings that expose electron-emissive elements (50A or 50B) situated over an emitter electrode. For an emitter electrode, the specified portion is an emitter-coupling portion situated below at least one electron-emissive element exposed through at least one opening in a control electrode. Configuring the device in this way enables the control-electrode-to-emitter-electrode capacitance to be quite small, thereby enhancing the device's switching speed. If the specified portion of the electrode becomes short circuited to the other electrode, the short-circuit defect can be removed by severing the specified portion from the remainder of its electrode.

Inventors:
RADIGAN STEVEN J
BONN MATTHEW A
KEMMOTSU HIDENORI
FAHLEN THEODORE S
Application Number:
PCT/US2002/038812
Publication Date:
October 09, 2003
Filing Date:
December 03, 2002
Export Citation:
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Assignee:
CANDESCENT INTELLECTUAL PROP (US)
SONY CORP (JP)
International Classes:
H01J3/02; (IPC1-7): H01J1/30; H01J1/304; H01J1/46
Foreign References:
US6338662B12002-01-15
US6201343B12001-03-13
US6107728A2000-08-22
US6002199A1999-12-14
US5754149A1998-05-19
US5459480A1995-10-17
US5589728A1996-12-31
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