Title:
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL GATE DEVICES
Document Type and Number:
WIPO Patent Application WO/2012/099928
Kind Code:
A3
Abstract:
A substrate is provided. An STI trench is formed in the substrate. A fill material is formed in the STI trench and then planarized. The substrate is exposed to an oxidizing ambient, growing a liner at a bottom and sidewalls of the STI trench. The liner reduces the Vt-W effect in high-k metal gate devices.
Inventors:
AQUILINO MICHAEL V (US)
BAIOCCO CHRISTOPHER V (US)
CONTI RICHARD A (US)
JAEGER DANIEL J (US)
NARAYANAN VIJAY (US)
BAIOCCO CHRISTOPHER V (US)
CONTI RICHARD A (US)
JAEGER DANIEL J (US)
NARAYANAN VIJAY (US)
Application Number:
PCT/US2012/021664
Publication Date:
December 27, 2012
Filing Date:
January 18, 2012
Export Citation:
Assignee:
IBM (US)
AQUILINO MICHAEL V (US)
BAIOCCO CHRISTOPHER V (US)
CONTI RICHARD A (US)
JAEGER DANIEL J (US)
NARAYANAN VIJAY (US)
AQUILINO MICHAEL V (US)
BAIOCCO CHRISTOPHER V (US)
CONTI RICHARD A (US)
JAEGER DANIEL J (US)
NARAYANAN VIJAY (US)
International Classes:
H01L21/762; H01L21/336; H01L29/78
Foreign References:
| KR20060076099A | 2006-07-04 | |||
| KR20040057500A | 2004-07-02 | |||
| KR20090008004A | 2009-01-21 | |||
| US6657276B1 | 2003-12-02 |
Attorney, Agent or Firm:
PETROKAITIS, Joseph (Intellectual Property Law 4822070 Route 5, Hopewell Junction NY, US)
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