Title:
STRUCTURE OF AND PREPARATION METHOD FOR SILICON CARBIDE TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2023/173425
Kind Code:
A1
Abstract:
Embodiments of the present application provide a structure of and a preparation method for a silicon carbide transistor. The structure of the silicon carbide transistor comprises: a silicon carbide substrate, a first element being doped in the silicon carbide substrate; an epitaxial layer, the epitaxial layer being provided on the upper surface of the silicon carbide substrate; a first metal layer, the first metal layer being provided on the lower surface of the silicon carbide substrate, and an ohmic contact being formed between the first metal layer and the silicon carbide substrate so as to form a bottom electrode; and a top electrode, the top electrode being provided on the epitaxial layer, wherein the silicon carbide substrate comprises an upper side area close to the epitaxial layer and a lower side area close to the first metal layer, and the concentration of the first element doped in at least part of the lower side area is higher than that of the first element doped in the upper side area, such that an ohmic contact having low specific contact resistivity can be formed in the silicon carbide transistor to reduce the power loss of the silicon carbide transistor.
Inventors:
TANG CEN (CN)
HU BIN (CN)
HU BIN (CN)
Application Number:
PCT/CN2022/081784
Publication Date:
September 21, 2023
Filing Date:
March 18, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/329; H01L21/04; H01L29/06; H01L29/861
Domestic Patent References:
| WO2022021685A1 | 2022-02-03 |
Foreign References:
| CN109473354A | 2019-03-15 | |||
| CN109994376A | 2019-07-09 | |||
| CN107546115A | 2018-01-05 | |||
| CN113644117A | 2021-11-12 | |||
| CN107623024A | 2018-01-23 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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