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Patent Searching and Data


Title:
SUB-AMPLIFIER, SWITCHING DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/049385
Kind Code:
A1
Abstract:
Provided are a sub-amplifier, a switching device and a semiconductor device capable of simultaneously reading or writing many data items, while suppressing an increase in chip surface area, by using a single end signal line. A sub-amplifier SAP comprises: a first pre-charge circuit 110 that releases pre-charges of a pair of local wires LIOT/LIOB; a local inversion drive circuit 120 that, on the basis of a write signal WT, inverts and transfers write data to a sense amplifier SA from a main wire MIOB via one of the local wires LIOT/LIOB; a local non-inversion drive circuit 130 that, on the basis of the write signal WT, transfers the write data to the sense amplifier SA from the main wire MIOB via the other one of the local wires LIOT/LIOB; and a main inversion drive circuit 140 that, on the basis of a read signal RT, inverts and transfers read data to the main wire MIOB from one of the local wires LIOT/LIOB.

Inventors:
YAMADA Yasutoshi (Access Bldg. 3F 11-8, Asahi-cho, Hachioji-sh, Tokyo 83, 〒1920083, JP)
Application Number:
JP2017/032724
Publication Date:
March 14, 2019
Filing Date:
September 11, 2017
Export Citation:
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Assignee:
ULTRAMEMORY INC. (Access Bldg. 3F, 11-8 Asahi-cho, Hachioji-sh, Tokyo 83, 〒1920083, JP)
International Classes:
G11C7/06
Attorney, Agent or Firm:
SHOBAYASHI Masayuki et al. (Sapia Tower, 1-7-12 Marunouchi, Chiyoda-k, Tokyo 05, 〒1000005, JP)
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