Title:
SUB-NANOMETER OVERLAY, CRITICAL DIMENSION, AND LITHOGRAPHY TOOL PROJECTION OPTIC METROLOGY SYSTEMS BASED ON MEASUREMENT OF EXPOSURE INDUCED CHANGES IN PHOTORESIST ON WAFERS
Document Type and Number:
WIPO Patent Application WO2006023612
Kind Code:
A3
Abstract:
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to patterned radiation to generate exposure-induced changes in the layer of photoresist which form patterns having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining locations of the one or more features of the pattern.
Inventors:
HILL HENRY A (US)
Application Number:
PCT/US2005/029339
Publication Date:
December 28, 2006
Filing Date:
August 18, 2005
Export Citation:
Assignee:
ZETETIC INST (US)
HILL HENRY A (US)
HILL HENRY A (US)
International Classes:
G01B11/02
Foreign References:
| US20050037272A1 | 2005-02-17 |
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