Title:
SUBSTRATE COMPRISING SI-BASE AND INAS-LAYER
Document Type and Number:
WIPO Patent Application WO/2012/148353
Kind Code:
A9
Abstract:
The present invention relates to a substrate (5) comprising a Si-base (1) and an InAs-layer (4) provided on said Si-base where said InAs-layer (4) has a thickness between 100 and 500 nanometers and root-mean-square roughness of the upper surface of said InAs-layer (4) is below 1 nanometer. The invention further relates to a method for forming said substrate. The invention also relates to growing InAs-nanowires (7) as well as a GaSb-layer (17) on said substrate (5).
Inventors:
WERNERSSON LARS-ERIK (SE)
GORJI GHALAMESTANI SEPIDEH (SE)
GORJI GHALAMESTANI SEPIDEH (SE)
Application Number:
PCT/SE2012/050447
Publication Date:
March 14, 2013
Filing Date:
April 27, 2012
Export Citation:
Assignee:
QUNANO AB (SE)
WERNERSSON LARS-ERIK (SE)
GORJI GHALAMESTANI SEPIDEH (SE)
WERNERSSON LARS-ERIK (SE)
GORJI GHALAMESTANI SEPIDEH (SE)
International Classes:
H01L21/02; B82Y10/00; H01L21/20; H01L29/06; H01L29/423
Attorney, Agent or Firm:
BRANN AB (S- Stockholm, SE)
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