Title:
SUBSTRATE COOLING METHOD AND SEMICONDUCTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/026772
Kind Code:
A1
Abstract:
Provided is a substrate cooling method wherein a substrate heated in a processing chamber is carried into a load-lock chamber in which a cooling plate having a substrate abutting surface for cooling the substrate by abutting on the substrate is arranged, and then, the substrate is cooled by supplying the load-lock chamber with a cooling gas. The substrate cooling method has a first cooling step of cooling the substrate by supplying the cooling gas to the circumference of the substrate in a state where a space is kept between the substrate and the substrate abutting surface of the cooling plate, and a second cooling step of cooling the substrate by means of the cooling plate by having the substrate abut on the substrate abutting surface of the cooling plate.
Inventors:
NAKAMURA SHUICHI (JP)
UCHINO SATOSHI (JP)
UCHINO SATOSHI (JP)
Application Number:
PCT/JP2009/004400
Publication Date:
March 11, 2010
Filing Date:
September 04, 2009
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
NAKAMURA SHUICHI (JP)
UCHINO SATOSHI (JP)
NAKAMURA SHUICHI (JP)
UCHINO SATOSHI (JP)
International Classes:
C23C14/34; C23C14/56; H01L21/683
Foreign References:
| JP2004221197A | 2004-08-05 | |||
| JPH10107126A | 1998-04-24 | |||
| JP2001196363A | 2001-07-19 | |||
| JPH11102904A | 1999-04-13 | |||
| JPH0230128A | 1990-01-31 | |||
| JP2008103707A | 2008-05-01 |
Attorney, Agent or Firm:
OHTSUKA, YASUNORI (JP)
Yasunari Otsuka (JP)
Yasunari Otsuka (JP)
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