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Title:
SUBSTRATE-EMBEDDED CAPACITOR, CAPACITOR-INTEGRATED SUBSTRATE PROVIDED WITH SAME, AND METHOD FOR PRODUCING SUBSTRATE-EMBEDDED CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2012/014647
Kind Code:
A1
Abstract:
The disclosed substrate-embedded capacitor is characterized by being provided with: a first electrode that extends in a predetermined direction; a dielectric layer provided to a region that is a portion of the aforementioned first electrode; a second electrode that is provided to the aforementioned dielectric layer and that faces the aforementioned first electrode with the dielectric layer therebetween; and an electrode layer that is provided to the aforementioned first electrode at the surroundings of the aforementioned dielectric layer and that is connected to the aforementioned first electrode. The substrate-embedded capacitor is further characterized by a portion of the aforementioned electrode layer being provided to the end section of the aforementioned dielectric layer, leaving a gap from the aforementioned second electrode in the aforementioned predetermined direction and facing the aforementioned first electrode with the aforementioned dielectric layer therebetween.

Inventors:
NOGUCHI HITOSHI (JP)
EZAKI KENICHI (JP)
Application Number:
PCT/JP2011/065544
Publication Date:
February 02, 2012
Filing Date:
July 07, 2011
Export Citation:
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Assignee:
SANYO ELECTRIC CO (JP)
NOGUCHI HITOSHI (JP)
EZAKI KENICHI (JP)
International Classes:
H01G4/12; H01G4/18; H01G4/33; H05K1/16; H05K3/46
Foreign References:
JP2007035975A2007-02-08
JP2010157529A2010-07-15
JP2000049041A2000-02-18
JPH0923066A1997-01-21
Attorney, Agent or Firm:
Hiroshi Sumiya (JP)
KADOYA HIROSHI (JP)
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