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Title:
SUBSTRATE-EMBEDDED CAPACITOR, CAPACITOR-INTEGRATED SUBSTRATE PROVIDED WITH SAME, AND METHOD FOR PRODUCING SUBSTRATE-EMBEDDED CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2012/014648
Kind Code:
A1
Abstract:
The disclosed substrate-embedded capacitor is characterized by being provided with: a first electrode that extends in a predetermined direction; a dielectric layer provided to the aforementioned first electrode; a second electrode that is provided to the aforementioned dielectric layer, faces the aforementioned first electrode with the dielectric layer therebetween, and has an end section that protrudes in the aforementioned predetermined direction from the aforementioned dielectric layer; and an electrode layer that is provided leaving a gap from the aforementioned first electrode in the aforementioned predetermined direction. The substrate-embedded capacitor is further characterized by the end section of the aforementioned second electrode in the aforementioned predetermined direction being connected to the aforementioned electrode layer, and the surface of the aforementioned electrode layer being provided in a manner so as to be positioned in the same plane as the surface of the aforementioned first electrode.

Inventors:
NOGUCHI Hitoshi (C/O SANYO Electric Co. Ltd, 5-5, Keihan-hondori 2-chome, Moriguchi-sh, Osaka 77, 〒5708677, JP)
野口 仁志 (〒77 大阪府守口市京阪本通2丁目5番5号 三洋電機株式会社内 Osaka, 〒5708677, JP)
Application Number:
JP2011/065545
Publication Date:
February 02, 2012
Filing Date:
July 07, 2011
Export Citation:
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Assignee:
SANYO Electric Co., Ltd. (5-5 Keihan-Hondori 2-chome, Moriguchi-shi Osaka, 77, 〒5708677, JP)
三洋電機株式会社 (〒77 大阪府守口市京阪本通2丁目5番5号 Osaka, 〒5708677, JP)
NOGUCHI Hitoshi (C/O SANYO Electric Co. Ltd, 5-5, Keihan-hondori 2-chome, Moriguchi-sh, Osaka 77, 〒5708677, JP)
International Classes:
H01G4/12; H01G4/18; H01G4/33; H05K1/16; H05K3/46
Attorney, Agent or Firm:
KADOYA Hiroshi (5-5, Keihan-Hondori 2-chome, Moriguchi-sh, Osaka 77, 〒5708677, JP)
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Claims: