Title:
SUBSTRATE FOR MASK BLANK, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE TYPE MASK BLANK, REFLECTIVE TYPE MASK, MANUFACTURING METHOD OF SUBSTRATE FOR MASK BLANK AND MANUFACTURING METHOD OF SUBSTRATE WITH MULTILAYER REFLECTIVE FILM AS WELL AS MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/104276
Kind Code:
A1
Abstract:
Provided is a substrate for a mask blank and the like, capable of effectively detecting critical defects since few false defects are detected, even in high sensitivity defect inspection device using various wavelengths of light. More specifically, provided is a substrate for a mask blank used in lithography, in which, on a primary surface of the substrate for a mask blank, on which a transfer pattern is formed, power spectrum density is 4 X 106 nm4 or less, at a space frequency of 1 X 10 -2 μｍ-1 or more and 1 μｍ-1 or less, detected by measuring, with a number of pixels of 640X480 in an white light interferometer, a region of 0,14 mm X 0,1 mm, and power spectrum density is 10 nm4 or less, at a space frequency of 1 μｍ-1 ore more, detected by measuring a region of 1 μｍ X 1 μｍ.
Inventors:
HAMAMOTO KAZUHIRO (JP)
ORIHARA TOSHIHIKO (JP)
SHOKI TSUTOMU (JP)
HORIKAWA JUNICHI (JP)
ORIHARA TOSHIHIKO (JP)
SHOKI TSUTOMU (JP)
HORIKAWA JUNICHI (JP)
Application Number:
PCT/JP2013/085049
Publication Date:
July 03, 2014
Filing Date:
December 27, 2013
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
H01L21/027; G03F1/24; G03F1/84
Domestic Patent References:
| WO2013146990A1 | 2013-10-03 |
Foreign References:
| JP2003505876A | 2003-02-12 | |||
| JP2006278515A | 2006-10-12 | |||
| JP2007283410A | 2007-11-01 | |||
| JP2008094649A | 2008-04-24 | |||
| JP2008156215A | 2008-07-10 | |||
| JP2009117782A | 2009-05-28 | |||
| JP2006226733A | 2006-08-31 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
Patent business corporation Tsukuni (JP)
Patent business corporation Tsukuni (JP)
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