Title:
SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS
Document Type and Number:
WIPO Patent Application WO/2010/124261
Kind Code:
A4
Abstract:
Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
Inventors:
MELNIK YURIY (US)
KRYLIOUK OLGA (US)
KOJIRI HIDEHIRO (US)
ISHIKAWA TETSUYA (US)
KRYLIOUK OLGA (US)
KOJIRI HIDEHIRO (US)
ISHIKAWA TETSUYA (US)
Application Number:
PCT/US2010/032313
Publication Date:
March 24, 2011
Filing Date:
April 23, 2010
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
MELNIK YURIY (US)
KRYLIOUK OLGA (US)
KOJIRI HIDEHIRO (US)
ISHIKAWA TETSUYA (US)
MELNIK YURIY (US)
KRYLIOUK OLGA (US)
KOJIRI HIDEHIRO (US)
ISHIKAWA TETSUYA (US)
International Classes:
H01L21/302; H01L21/20; H01L33/02; H01S5/30
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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