SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND RECORDING MEDIUM

WIPO Patent Application WO/2007/055190

A1

Disclosed are a substrate processing apparatus and substrate processing method wherein the temperature of a wafer can be effectively controlled even when the wafer is processed at a low pressure, while preventing adhesion of particles or damage to the wafer. Also disclosed is a recording medium used for such a substrate processing apparatus and substrate processing method. A substrate (W) is introduced into a process chamber (32) and the substrate (W) is placed on a stage (40) by bringing the lower surface of the substrate (W) into contact with a contact member (42) arranged on the upper surface of the stage (40) while forming a gap (G) between the substrate (W) and the stage (40). Then, while maintaining the process chamber (32) at a certain pressure, the temperature of the stage (40) is controlled, thereby controlling the temperature of the substrate (W). After that, the process chamber (32) is maintained at a pressure lower than the above-mentioned certain pressure, and the substrate (W) is subjected to a certain treatment.

WO/2004/029606	EDDY CURRENT BASED MEASUREMENT CAPABILITIES
JP2018182185	PLANARIZING APPARATUS AND PLANARIZING METHOD, SUBSTRATE, AND SUBSTRATE MANUFACTURING METHOD

MURAKI YUSUKE (JP)
TOZAWA SHIGEKI (JP)
ORII TAKEHIKO (JP)

PCT/JP2006/322155

May 18, 2007

November 07, 2006

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TOKYO ELECTRON LTD (JP)
MURAKI YUSUKE (JP)
TOZAWA SHIGEKI (JP)
ORII TAKEHIKO (JP)

H01L21/302; H01L21/205; H01L21/304; H01L29/78

JP2000208498A	2000-07-28
JP2004343094A	2004-12-02

HAGIWARA, Yasushi (Shinjuku Akebonobashi Building 1-12, Sumiyoshi-ch, Shinjuku-ku Tokyo 65, JP)

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