Title:
SUBSTRATE PROCESSING DEVICE, HEATER UNIT, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/179157
Kind Code:
A1
Abstract:
Provided is a substrate processing device provided with: a reaction tube in which a substrate is housed; a lid portion for closing a furnace opening formed in the reaction tube; a heater disposed on the outer periphery of a side wall in the vicinity of the furnace opening of the reaction tube; a plurality of temperature sensors respectively configured to measure the temperatures at a plurality of mutually different positions in the circumferential direction of the side wall in the vicinity of the furnace opening of the reaction tube; and a control unit configured to control the heater on the basis of respective measurement values according to the plurality of temperature sensors. In this way, heating is performed so as to prevent the development of local deviations in the temperatures of members of which a processing chamber is formed.
Inventors:
YANAI HIDEHIRO (JP)
INADA TETSUAKI (JP)
TATENO HIDETO (JP)
MIYANISHI YUYA (JP)
INADA TETSUAKI (JP)
TATENO HIDETO (JP)
MIYANISHI YUYA (JP)
Application Number:
PCT/JP2017/012974
Publication Date:
October 04, 2018
Filing Date:
March 29, 2017
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; H01L21/324
Domestic Patent References:
| WO2014192871A1 | 2014-12-04 |
Foreign References:
| JP2007258307A | 2007-10-04 | |||
| JPH05144746A | 1993-06-11 | |||
| JP2010040952A | 2010-02-18 | |||
| JP2011023514A | 2011-02-03 | |||
| JP2009004715A | 2009-01-08 |
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