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Title:
SUBSTRATE PROCESSING DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND REACTION TUBE
Document Type and Number:
WIPO Patent Application WO/2015/041376
Kind Code:
A1
Abstract:
Provided is art that can improve productivity. This substrate processing device has: a substrate holding member that holds a plurality of substrates; a reaction tube that accommodates the substrate holding member, and that processes the substrates; a processing gas supply system that supplies a processing gas to inside the reaction tube: and a gas discharge system that discharges the atmosphere inside the reaction tube. The reaction tube has: a cylindrical part having a closed end at the top end thereof and an opening at the bottom end thereof; a gas supply area which is formed outside one side wall of the cylindrical part, and to which the processing gas supply system is connected; and a gas discharge area which is formed outside the other side wall of the cylindrical part and opposite to the gas supply area, and to which the gas discharge system is connected. The gas supply area and the gas discharge area are configured so as to be provided with internal walls that divide the space therein into a plurality of spaces.

Inventors:
YOSHIDA HIDENARI (JP)
ODAKE SHIGERU (JP)
TANIYAMA TOMOSHI (JP)
NAKATA TAKAYUKI (JP)
Application Number:
PCT/JP2014/076023
Publication Date:
March 26, 2015
Filing Date:
September 30, 2014
Export Citation:
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Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/455
Domestic Patent References:
WO2013073887A12013-05-23
Foreign References:
JP2000294511A2000-10-20
JP2001077042A2001-03-23
JP2002222806A2002-08-09
JP2011512031A2011-04-14
JP2014207435A2014-10-30
JP2007109711A2007-04-26
JP2005317734A2005-11-10
JP2004162114A2004-06-10
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