Title:
SUBSTRATE PROCESSING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2018/100826
Kind Code:
A1
Abstract:
According to one aspect of the present invention, provided are the following: a heater unit that heats a substrate placed on a boat; a temperature control unit that controls the heater unit so as to maintain a predetermined temperature; a valve control unit that adjusts an opening degree of a control valve for adjusting the flow rate of a gas supplied to a reaction tube; and a control unit that instructs execution of a process containing a temperature raising step for raising the temperature to a predetermined temperature at a predetermined temperature raising rate, a processing step for processing the substrate at the predetermined temperature, and a temperature lowering step for lowering the temperature from the predetermined temperature at a predetermined temperature lowering rate. Also provided is a configuration in which the heating by the heater unit and the cooling by the gas supplied from the control valve are performed in parallel so as to track the predetermined temperature raising rate and predetermined temperature lowering rate.
Inventors:
SUGISHITA MASASHI (JP)
UENO MASAAKI (JP)
UENO MASAAKI (JP)
Application Number:
PCT/JP2017/032242
Publication Date:
June 07, 2018
Filing Date:
September 07, 2017
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/52; H01L21/02
Foreign References:
| JP2011216854A | 2011-10-27 | |||
| JP2006222327A | 2006-08-24 | |||
| JP2003031510A | 2003-01-31 | |||
| JP2002075890A | 2002-03-15 | |||
| JPH09190982A | 1997-07-22 | |||
| JP2014209569A | 2014-11-06 |
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